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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5491 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 40V(Min) *Low Saturation Voltage: VCE (sat)= 1V(Max)@IC= 2.0A APPLICATIONS *Designed for a wide variety of medium-power switching and amplifier applications , such as series and shunt regulators and driver and output stages of high-fidelity amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEV VCER VCEO VEBO IC IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage VBE= -1.5V Collector-Emitter Voltage RBE= 100 Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation @ Ta=25 Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range VALUE 60 60 50 40 5 7 3 1.8 W 50 150 -65~150 UNIT V V V V V A A PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c Rth j-a PARAMETER Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient MAX 2.5 70 UNIT /W /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCEV(SUS) PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage CONDITIONS IC= 100mA ;IB= 0 IC= 100mA ; RBE= 100 IC= 100mA ; VBE= -1.5V IC= 2 A; IB= 0.2A IC= 2A ; VCE= 4V VCE= 55V; VBE= -1.5V VCE= 55V; VBE= -1.5V;TC= 125 VCE= 40V; RBE= 100 VCE= 40V; RBE= 100; TC= 125 VEB= 5V; IC= 0 IC= 2A ; VCE= 4V IC= 0.5A ; VCE= 4V 20 0.8 MIN 40 50 60 2N5491 MAX UNIT V V V VCE(sat) VBE(on) ICEV ICER IEBO hFE fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current 1.0 1.1 1.0 5.0 2.0 3.5 1.0 V V mA mA mA DC Current Gain Current-Gain--Bandwidth Product 100 MHz Switching Times Turn-On Time IC= 2A; IB1= -IB2= 0.2A toff Turn-Off Time 15 s 5 s ton isc Websitewww.iscsemi.cn 2 |
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